Comparative analysis for level of the defectiveness in SiC power MOSFETs
DOI:
https://doi.org/10.47187/perspectivas.vol2iss1.pp33-37.2020Keywords:
Silicon Carbide, MOSFET, HysteresisAbstract
Currently, field effect transistors made of silicon carbon are an emerging technology that is entering the market for power devices, due to the higher benefits of this family of semiconductors in relation to silicon. Due to its wide bandgap, presents several peculiarities of defectiveness within its structure that directly affects the electrical characteristics of the devices, the objective of this article is to determine the level of defectiveness inside the MOS structure, using the hysteresis characterization technique In order to achieve this objective, two families of MOSFET devices manufactured in silicon carbide of different electrical characteristics were evaluated experimentally, the evaluated devices belong the same manufacturer. The level of defectiveness showed by each tested device, marks a trend according to their capability of electrical characteristics and family.
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Copyright (c) 2020 Esteban Guevara, José Tinajero, Mauro Guevara, Mildred Cajas
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